FIG. 2. Localization ratio defined by Eq. (1) for the electronic states at the conduction (a,c) and the valence (b,d) band edges in GaAs due to single isovalent impurities plotted as a function of the element’s Born effective charge. The dashed line is a guide to the eye.

FIG. 2. Localization ratio defined by Eq. (1) for the electronic states
at the conduction (a,c) and the valence (b,d) band edges in GaAs due
to single isovalent impurities plotted as a function of the element’s
Born effective charge. The dashed line is a guide to the eye.

Leave a Reply

Your email address will not be published. Required fields are marked *